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STY60NM60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY60NM60
Description  N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh?줡ower MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY60NM60 Datasheet(HTML) 3 Page - STMicroelectronics

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STY60NM60
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
10
µA
VDS = Max Rating, TC = 125°C
100
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
34
5V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V,ID = 30 A
0.050
0.055
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =ID(on) xRDS(on)max,
ID =30A
35
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V,f= 1MHz, VGS = 0
7300
2000
40
pF
pF
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =300 V, ID =30 A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
55
95
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =470 V, ID =60 A,
VGS =10 V
178
44.5
95
266
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400 V, ID =60A,
RG =4.7Ω, VGS =10 V
(see test circuit, Figure 5)
130
76
105
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
VSD (1)
Forward On Voltage
ISD =60A,VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100 A/µs,
VDD =30 V,Tj = 150°C
(see test circuit, Figure 5)
600
14
48
ns
µC
A



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