STU40N2LH5 datasheet(3/12 Pages) STMICROELECTRONICS

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STD40N2LH5 - STU40N2LH5

Electrical characteristics

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Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 25 V

VDS = 25 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 20 A

SMD version

0.01

0.012

Ω

VGS= 10 V, ID= 20 A

0.0106 0.0126

Ω

VGS= 5 V, ID= 20 A

SMD version

0.0135

0.017

Ω

VGS= 5 V, ID= 20 A

0.0141 0.0176

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

840

180

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 3)

TBD

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 8)

TBD

Gate input resistance

f=1 MHz gate bias

Bias= 0 test signal

level=20 mV

open drain

1.1

Ω

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