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STY100NS20FD Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY100NS20FD
Description  N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY??Power MOSFET
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY100NS20FD Datasheet(HTML) 3 Page - STMicroelectronics

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STY100NS20FD
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
200
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
200
V
VGS
Gate- source voltage
±20
V
ID
Drain current (continuos) at TC = 25°C
100
A
ID
Drain current (continuos) at TC = 100°C
63
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
400
A
PTOT
Total dissipation at TC = 25°C
450
W
Derating factor
3.6
W/°C
dv/dt (2)
2.
ISD <100A, di/dt < 200A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
25
V/ns
Tstg
Storage temperature
–65 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case Max
0.277
°C/W
Rthj-amb Thermal resistance junction-ambient Max
30
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
110
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
750
mJ



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