Document Number: 91116

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

7

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91116.

Q

GS

Q

GD

Q

G

Charge

10 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

G

• Driver same type as D.U.T.

• D.U.T. - device under test

D.U.T

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer