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ATP203 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP203
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP203 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP203
No. A1318-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=38A
13
22
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=38A, VGS=10V
6.3
8.2
mΩ
RDS(on)2
ID=19A, VGS=4.5V
9.5
13.5
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
2750
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
450
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
265
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
24
ns
Rise Time
tr
See specified Test Circuit.
420
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
130
ns
Fall Time
tf
See specified Test Circuit.
75
ns
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=75A
44
nC
Gate-to-Source Charge
Qgs
VDS=15V, VGS=10V, ID=75A
14
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=15V, VGS=10V, ID=75A
5.6
nC
Diode Forward Voltage
VSD
IS=75A, VGS=0V
1.02
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=38A
RL=0.39Ω
VDD=15V
VOUT
ATP203
VIN
10V
0V
VIN



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