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FSM75N75 Datasheet(PDF) 3 Page - FOSLINK SEMICONDUCTOR CO.,LTD |
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FSM75N75 Datasheet(HTML) 3 Page - FOSLINK SEMICONDUCTOR CO.,LTD |
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3 / 9 page ![]() N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET 2007-7-27 3/9 FSM75N75 ELECTRICAL CHARACTERISTICS(TCASE=25°C, UNLESS OTHERWISE NOTED) Source-Drain Diode Ratings and Characteristics Symbol Test Conditions Min. Typ. Max. Unit IS VGS = 0V, Source-drain Current 80 A ISM Repetitive; pulse width limited by TJM 320 A VSD IF = 80A, VGS = 0 V 0.98 1.4 V trr 70 ns Qrr VGS = 0 V, Is = 80A dIF=100A/us, Pulse test, t ≤ 300 µs, duty cycle d ≤ 1.5% 200 nC TYPICAL CHARACTERISTICS |
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