SI3456CDV datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 69933

S-80188-Rev. A, 04-Feb-08

www.vishay.com

Vishay Siliconix

Si3456CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =10thru 5 V

VGS =3 V

VGS =4 V

0.00

0.02

0.04

0.06

0.08

0.10

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

246

ID =6.1 A

Qg - Total Gate Charge (nC)

VDS =24 V

VDS =15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC =25 °C

TC = - 55 °C

Crss

100

200

300

400

500

600

Coss

Ciss

VDS -- Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V,4.5 V,ID =6.1 A

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