TCST1030L datasheet(3/10 Pages) VISHAY

3 / 10 page

TCST1030(L)

Document Number 83763

Rev. 1.6, 16-Aug-06

Vishay Semiconductors

www.vishay.com

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Figure 1. Test Circuit for ton and toff

Figure 2. Switching Times

Channel I

Channel II

20223

+ 5 V

IC = 1 mA; adjusted by I

RG = 50 Ω

t p

= 0.01

Oscilloscope

1 M

L ≥

≤ 20 pF

100

= 50 µs

10 %

90 %

100 %

ton

toff

96 11698

pulse duration

delay time

rise time

ton (=t + t )

turn-on time

storage time

fall time

toff (= ts +tf)turn-off time

Figure 3. Power Dissipation Limit vs. Ambient Temperature

100

200

300

400

95 11088

Tamb - Ambient Temperature (°C)

Coupled device

Phototransistor

IR - diode

150

120

Figure 4. Forward Current vs. Forward Voltage

0.1

100

1000

VF - Forward Voltage (V)

96 11862

1.6

0.2

1.4

1.2

1.0

0.8

0.6

0.4

2.0

1.8

Figure 5. Relative Current Transfer Ratio vs.

Ambient Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

96 11767

VCE = 5 V

IF = 20 mA

Tamb - Ambient Temperature (°C)

- 30

-10

- 20

100

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