GSIB4A20 thru GSIB4A80

Vishay General Semiconductor

Document Number: 88858

Revision: 01-Feb-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.3

1.1

1.3

0.01

10

0.1

1

100

0.5

0.7

0.9

T

T

T

Instantaneous Forward Voltage (V)

1000

20

60

40

100

80

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

1

10

100

10

1

100

0

1000

Reverse Voltage (V)

0.1

1

10

100

0.01

0.1

10

1

100

t - Heating Time (s)

+

0.996 (25.3)

0.972 (24.7)

0.709 (18.0)

0.669 (17.0)

0.602 (15.3)

0.579 (14.7)

0.118 x 45° Chamfer

0.492

(12.5)

0.042 (1.07)

0.038 (0.96)

DIA.

0.157 (4.0)

0.078 (1.98)

0.062 (1.58)

0.057 (1.45)

0.041 (1.05)

0.189 (4.8)

0.173 (4.4)

0.709 (18.0)

0.669 (17.0)

0.146 (3.7)

0.130 (3.3)

0.150 (3.8)

0.134 (3.4)

0.134 (3.4)

0.122 (3.1)

DIA.

0.126 (3.2)

0.110 (2.8)

0.059

(1.50)

0.012

(0.30)

Z

Detail Z

Enlarged

0.382 (9.7)

0.366 (9.3)

0.303 (7.7)

0.287 (7.3)

(3 x)

Case Style GSIB-3G