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MBR30H35PT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR30H35PT Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() MBR30H35PT thru MBR30H60PT Vishay General Semiconductor Document Number: 88792 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V to 60 V IFSM 200 A VF 0.58 V, 0.63 V IR 150 µA TJ max. 175 °C PIN 1 PIN 3 CASE PIN 2 TO-247AD (TO-3P) 1 2 3 Note: (1) 2.0 µs pulse width, f = 1.0 kHz MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (Fig. 1) IF(AV) 30 A Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse surge current per diode (1) IRRM 2.0 1.0 A Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 30 20 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k Ω VC 25 kV Voltage rate of change at rated VR dV/dt 10 000 V/µs Operating junction temperature range TJ - 65 to + 175 °C Storage temperature range TSTG - 65 to + 175 °C |
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