MI2060C datasheet(2/4 Pages) VISHAY

2 / 4 page

New Product

MI2050C & MI2060C

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89007

Revision: 19-May-08

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Maximum instantaneous

forward voltage per diode (1)

IF = 5 A

IF = 10 A

TJ = 25 °C

0.554

0.649

0.74

IF = 5 A

IF = 10 A

TJ = 125 °C

0.484

0.570

0.62

Reverse current per diode (2)

rated VR

TJ = 25 °C

TJ = 125 °C

10.8

150

µA

Typical junction capacitance

4.0 V, 1 MHz

300

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MI2050C

MI2060C

UNIT

Typical thermal resistance per diode

RθJC

2.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-262AA

MI2060C-E3/4W

1.456

50/tube

Tube

Figure 1. Forward Derating Curve (Total)

100

150

Resistive or Inductive Load

Case Temperature (°C)

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

140

120

100

160

100

J = TJ Max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

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