MOC8101 datasheet(2/7 Pages) VISHAY

2 / 7 page

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Document Number: 83660

Rev. 1.5, 11-Jan-08

MOC8101/MOC8102/MOC8103/MOC8104/MOC8105

Vishay Semiconductors

Optocoupler, Phototransistor Output,

No Base Connection

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

Forward continuous current

Surge forward current

≤ 10 µs

IFSM

2.5

Power dissipation

Pdiss

100

Derate linearly from 25°C

1.33

mW/°C

OUTPUT

Collector emitter breakdown voltage

BVCEO

Emitter collector breakdown voltage

BVECO

7.0

Collector current

Derate linearly from 25°C

2.0

mW/°C

Power dissipation

Pdiss

150

COUPLER

Isolation test voltage

VISO

5300

VRMS

Creepage distance

≥ 7.0

Clearance distance

≥ 7.0

Isolation thickness between

emitter and detector

≥ 0.4

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI

175

Isolation resistance

VIO = 500 V

RIO

1012

Derate linearly from 25 °C

3.33

mW/°C

Total power dissipation

Ptot

250

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Junction temperature

100

°C

Soldering temperature (2)

max. 10 s, dip soldering:

distance to seating plane

≥ 1.5 mm

Tsld

260

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

1.25

1.5

Breakdown voltage

IR = 10 µA

VBR

6.0

Reverse current

VR = 6.0 V

0.01

µA

Capacitance

VR = 0 V, f = 1.0 MHz

Thermal resistance

Rthja

750

K/W

OUTPUT

Collector emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

5.2

Collector emitter dark current

VCE = 10 V, Tamp = 25 °C

MOC8101

ICEO1

1.0

VCE = 10 V, Tamp = 100 °C

MOC8102

ICEO1

1.0

µA

Collector emitter breakdown voltage

IC = 1.0 mA

BVCEO

Emitter collector breakdown voltage

IE = 100 μABVECO

7.0

Thermal resistance

Rthja

500

K/W

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