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TMBAT49 Datasheet(PDF) 1 Page - STMicroelectronics |
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TMBAT49 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  ® TMBAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex- cessive voltage such as electrostatic discharges. August 1999 Ed 1A MELF (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 80 V IF Forward Continuous Current Ti = 70 °C 500 mA IFRM Repetitive Peak Forward Current tp = 1s δ ≤ 0.5 3A IFSM Surge non Repetitive Forward Current tp = 10ms 10 A Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 °C °C TL Maximum Temperature for Soldering during 15s 260 °C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Test Conditions Value Unit Rth(j-l) Junction-leads 110 °C/W THERMAL RESISTANCE * Pulse test: tp ≤ 300µs δ < 2%. Symbol Test Conditions Min. Typ. Max. Unit IR * Tj = 25 °CVR = 80V 200 µA VF * Tj = 25 °CIF = 10mA 0.32 V Tj = 25 °CIF = 100mA 0.42 Tj = 25 °CIF = 1A 1 STATIC CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25 °C f = 1MHz VR = 0V 120 pF VR = 5V 35 DYNAMIC CHARACTERISTICS 1/4 |
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