BAS32L datasheet(5/10 Pages) NXP

5 / 10 page

BAS32L_6

Product data sheet

Rev. 06 — 29 October 2008

5 of 10

NXP Semiconductors

BAS32L

High-speed switching diode

Test information

f = 1 MHz; Tj =25 °C

Fig 5.

Diode capacitance as a function of reverse voltage; typical values

010

1.2

1.0

0.6

0.4

0.8

mgd004

VR (V)

(pF)

Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ≤ 0.05

Oscilloscope: Rise time tr = 0.35 ns

(1) IR =1mA

Fig 6.

Reverse recovery time test circuit and waveforms

Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ≤ 0.005

Fig 7.

Forward recovery voltage test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

RS = 50 Ω

Ri = 50 Ω

OSCILLOSCOPE

1 k

Ω

450

Ω

D.U.T.

mga882

VFR

output signal

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