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VNP5N07FI Datasheet(PDF) 3 Page - STMicroelectronics |
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VNP5N07FI Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() 3/15 VND5N07/VND5N07-1/VNP5N07FI/K5N07FM ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 5. Off Table 6. On (1) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 7. Dynamic Note: 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Table 8. Switching (3) Note: 3. Parameters guaranteed by design/characterization. Symbol Parameter Test Conditions Min. Typ. Max. Unit VCLAMP Drain-source Clamp Voltage ID = 200 mA; Vin = 0 60 70 80 V VCLTH Drain-source Threshold Voltage ID = 2 mA; Vin = 0 55 V VINCL Input-Source Reverse Clamp Voltage Iin = –1 mA –1 –0.3 V IDSS Zero Input Voltage Drain Current (Vin = 0) VDS = 13 V; Vin = 0 VDS = 25 V; Vin = 0 50 200 µA µA IISS Supply Current from Input Pin VDS = 0 V; Vin = 10 V 250 500 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VIN(th) Input Threshold Voltage VDS = Vin; ID + Iin = 1 mA 0.8 3 V RDS(on) Static Drain-source On Resistance Vin = 10 V; ID = 2.5 A Vin = 5 V; ID = 2.5 A 0.200 0.280 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (2) Forward Transconductance VDS = 13 V; ID = 2.5 A 3 4 S Coss Output Capacitance VDS = 13 V; f = 1 MHz; Vin = 0 200 300 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15 V; Id = 2.5 A; 50 100 ns tr Rise Time Vgen = 10V; Rgen = 10 Ω 60 100 ns td(off) Turn-off Delay Time (see Figure 28) 150 300 ns tf Fall Time 40 80 ns td(on) Turn-on Delay Time VDD = 15 V; Id = 2.5 A; 150 250 ns tr Rise Time Vgen = 10V; Rgen = 1000 Ω 400 600 ns td(off) Turn-off Delay Time (see Figure 28) 3900 5000 ns tf Fall Time 1100 1600 ns (di/dt)on Turn-on Current Slope VDD = 15 V; ID = 2.5 A Vin = 10 V; Rgen = 10 Ω 80 A/µS Qi Total Input Charge VDD = 12 V; ID = 2.5 A; Vin = 10 V 18 nC |
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