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VNV35N07 Datasheet(PDF) 3 Page - STMicroelectronics

Part # VNV35N07
Description  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNV35N07 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =28 V
Id =18 A
Vgen =10 V
Rgen =10
Ω
(see f igure 3)
100
350
650
200
200
600
1000
350
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =28 V
Id =18 A
Vgen =10 V
Rgen = 1000
Ω
(see f igure 3)
500
2.7
10
4.3
800
4.2
16
6.5
ns
µs
µs
µs
(di/ dt)on
Turn-on Current Slope
VDD =28 V
ID =18 A
Vin =10 V
Rgen =10
Ω
60
A/
µs
Qi
Total Input Charge
VDD =12 V
ID =18 A
Vin = 10 V
100
nC
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VSD (
∗)Forward On Voltage
ISD =18 A
Vin =0
1.6
V
trr(
∗∗)
Qrr(
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 18 A
di/dt = 100 A/
µs
VDD =30 V
Tj =25
oC
(see t est circuit, figure 5)
250
1
8
ns
µC
A
PROTECTION
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
Ilim
Drain Current Limit
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
25
25
35
35
45
45
A
A
tdlim(
∗∗)
St ep Response
Current Limit
Vin =10 V
Vin =5 V
35
70
60
140
µs
µs
Tjsh(
∗∗)
Overtemperature
Shutdown
150
oC
Tjrs(
∗∗)
Overtemperature Reset
135
oC
Igf(
∗∗)
Fault Sink Current
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
50
20
mA
mA
Eas(
∗∗)
Single Pulse
Avalanche Energy
st arting Tj =25
oCVDD =20 V
Vin =10 V
Rgen =1 K
Ω L= 10 mH
2. 5
J
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
VNP35N07FI-VNB35N07-VNV35N07
3/13



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