2SC3669 datasheet(1/5 Pages) TOSHIBA

Part #	2SC3669

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications

PDF	5 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC3669

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3669

Power Amplifier Applications

Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)

• High-speed switching: tstg = 1.0 µs (typ.)

• Complementary to 2SA1429

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

80

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

2

A

Base current

IB

1

A

Collector power dissipation

PC

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 80 V, IE = 0

―

1.0

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

1.0

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

80

―

V

hFE (1)

(Note)

VCE = 2 V, IC = 0.5 A

70

―

240

DC current gain

hFE (2)

VCE = 2 V, IC = 1.5 A

40

―

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 0.05 A

―

0.15

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 0.05 A

―

0.9

1.2

V

Transition frequency

fT

VCE = 2 V, IC = 0.5 A

―

100

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

30

―

pF

Turn-on time

ton

―

0.2

―

Storage time

tstg

―

1.0

―

Switching time

Fall time

tf

IB1 = −IB2 = 0.05 A, duty cycle ≤ 1%

―

0.2

―

µs

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

20 µs

VCC = 30 V

Output

IB2

IB1

Input

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