Z00607MA datasheet(3/6 Pages) STMICROELECTRONICS

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Z00607MA

3/6

Figure 3: Relative

variation

thermal

impedance versus pulse duration

Figure 4: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 5: Surge peak on-state current versus

number of cycles

Figure 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width tp < 10 ms

and corresponding value of I2t

Figure 7: On-state characteristics (maximum

values)

Figure 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values)

K=[Z

th(j-a)

th(j-a)]

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

t(s)

-40

-20

100

120

0.0

0.5

1.0

1.5

2.0

2.5

I, I , I [T ] /

, I , I [T =25°C]

T (°C)

IGT

IH &IL

100

1000

One cycle

t=20ms

I(A)

TSM

Number of cycles

Non repetitive

T initial = 25°C

Repetitive

= 25°C

amb

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

200.0

t(ms)

(A), I t (A s)

TSM

dI/dt limitation:

20A/µs

T initial = 25°C

ITSM

I(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

V(V)

T =

max.

T = 25°C

T =max.

V =0.95 V

R =420 m

Ω

0.1

1.0

10.0

0.0

2.0

4.0

6.0

8.0

10.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dV/dt)c (V/µs)

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