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DN3125 Datasheet(PDF) 2 Page - Supertex, Inc

Part # DN3125
Description  N-Channel Depletion-Mode Vertical DMOS FETs
PDF  2 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

DN3125 Datasheet(HTML) 2 Page - Supertex, Inc

  DN3125 Datasheet HTML 1Page - Supertex, Inc DN3125 Datasheet HTML 2Page - Supertex, Inc  
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2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
DN3125
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics (@ 25°C unless otherwise specified)
Notes:
1.
All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Souce Breakdown Voltage
250
V
V
GS = -5.0V, ID = 100µA
V
GS(OFF)
Gate-to-Source OFF Voltage
-1.5
-3.5
V
V
DS = 15V, ID = 10µA
∆V
GS(OFF)
Change in V
GS(OFF) with Temperature
4.5
mV/°CV
DS = 15V, ID = 10µA
I
GSS
Gate Body Leakage Current
100
nA
V
GS = ±20V, VDS = 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
µAV
GS = -5.0V, VDS = Max Rating
1.0
mA
V
GS = -5.0V, VDS = 0.8 Max Rating
T
A = 125°C
I
DSS
Saturated Drain-to-Source Current
200
mA
V
GS = 0V, VDS = 15V
R
DS(ON)
Static Drain-to-Source
20
V
GS = 0V, ID = 150mA
ON-State Resistance
20
V
GS = -0.8V, ID = 50mA
∆R
DS(ON)
Change in R
DS(ON) with Temperature
1.1
%/°CV
GS = 0V, ID = 150mA
G
FS
Forward Transconductance
150
mm
I
D = 100mA, VDS=10V
C
ISS
Input Capacitance
60
120
C
OSS
Common Source Output Capacitance
6.0
15
pF
V
GS = -5.0V, VDS = 25V,
C
RSS
Reverse Transfer Capacitance
3.0
10
f =1.0Mhz
t
d(ON)
Turn-ON Delay Time
10
ns
V
DD = 25V,
t
r
Rise Time
15
I
D = 150mA,
t
d(OFF)
Turn-OFF Delay Time
15
R
GEN = 25Ω,
t
f
Fall Time
20
V
GS = 0V to -10V
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS = -5.0V, ISD = 150mA
t
rr
Reverse Recovery Time
800
ns
V
GS = -5.0V, ISD = 150mA



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