1

TN2124

08/30/99

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and

other Supertex products, refer to the Supertex 1998 Databook.

TN2124

Low Threshold

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Note: See Package Outline section for dimensions.

N-Channel Enhancement-Mode

Vertical DMOS FETs

Package Options

BV

DGS

(max)

(max)

TO-243AA**

TO-236AB*

240V

15

Ω

2.0V

TN2124N8

TN2124K1

* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

** Prodcut supplied on 2000 piece carrier tape reels.

Order Number / Package

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Product marking for SOT-23:

N1C❋

where ❋ = 2-week alpha date code

Ordering Information

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55

°C to +150°C

Soldering Temperature*

300

°C

TO-236AB

(SOT-23)

top view

Gate

Source

Drain

TO-243AA

(SOT-89)

G

D

S

D