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2SA1575 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1575 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Diodes SMD Type Transistors hFE Classification Marking C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 Wide-Band Amplifier Applications 2SA1575 www.kexin.com.cn Electrical Characteristics TA=25 3 Parameter Symbol Test conditions Min Typ Max Unit Collector-base Breakdown voltage BVCBO IC =-10 ìA , IE = 0 -200 V Collector-emitter Breakdown voltage BVCEO IC =-1mA ,RBE = -200 V Emitter-base Breakdown voltage BVEBO IE = -100 ìA , IC =0 -4 V Collector-base cutoff current ICBO VCB = -150 V , IE =0 -0.1 ìA Emitter-base cutoff current IEBO VEB =-2V , IC =0 -1.0 ìA Forward current transfer ratio hFE VCE =-10 V , IC =-10 mA VCE =-10 V , IC =-60 mA 40 20 320 Collector-emitter saturation voltage VCE(sat) IC =-20 mA , IB =-2mA -1.0 V Base -emitter saturation voltage VBE(sat) IE =-20 mA , IB =-2mA -1.0 V Transition frequency fT VCE =-30 V , IC= -30 mA 400 MHz Collector output capacitance (Common base, input open circuited) Cob VCB =-30 V , IE = 0 , f = 1MHz 2.3 pF Reverse Transfer Capacitance Cre VCB= -30 V, f = 1MHz 1.7 pF |
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