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VP0550 Datasheet(PDF) 2 Page - Supertex, Inc |
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VP0550 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 4 page ![]() 2 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V VP0550 Switching Waveforms and Test Circuit Electrical Characteristics (@ 25°C unless otherwise specified) Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja I DR*IDRM @ T C = 25°C °C/W °C/W TO-92 -54mA -0.25A 1W 125 170 -54mA -0.25A * I D (continuous) is limited by max rated T j . Symbol Parameter Min Typ Max Unit Conditions BVDSS -500 V GS(th) Gate Threshold Voltage -2.0 -4.5 V V GS = VDS, ID = -1mA ∆VGS(th) Change in V GS(th) with Temperature 3.5 6 mV/°CVGS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V I DSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating µAVGS = 0V, VDS = 0.8 Max Rating T A = 125°C I D(ON) ON-State Drain Current -90 V GS = -5V, VDS = -25V -100 -240 VGS = -10V, VDS = -25V R DS(ON) 85 V GS = -5V, ID = -5mA 80 125 V GS = -10V, ID = -10mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.85 %/°CVGS = -10V, ID = -10mA G FS Forward Transconductance 25 40 m V DS = -25V, ID = -10mA CISS Input Capacitance 40 70 COSS Common Source Output Capacitance 10 20 pF C RSS Reverse Transfer Capacitance 3 10 td(ON) Turn-ON Delay Time 5 10 tr Rise Time 8 10 t d(OFF) Turn-OFF Delay Time 8 15 tf Fall Time 5 16 VSD Diode Forward Voltage Drop -0.8 -1.5 V VGS = 0V, ISD = -0.1A t rr Reverse Recovery Time 200 ns V GS = 0V, ISD = -0.1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. mA VVGS = 0V, ID = -1mA Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance -1000 V DD = -25V ns ID = -100mA R GEN = 25Ω VGS = 0V, VDS = -25V f = 1 MHz Ω |
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