2SC4180 datasheet(1/1 Pages) KEXIN

Part #	2SC4180

Description	NPN Silicon Epitaxial Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

1

www.kexin.com.cn

1 Emitter

2 Base

3 Collector

NPN Silicon Epitaxial Transistor

2SC4180

Features

Small dimension

High DC current gain

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

120

V

Collector-emitter voltage

VCEO

120

V

Emitter-base voltage

VEBO

5V

Collector current

IC

50

mA

Total power dissipation

PT

150

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 120V, IE=0

0.05

ìA

Emitter cutoff current

IEBO

VEB =5V, IC=0

0.05

ìA

VCE =6V , IC = 1mA*

135

600

900

VCE =6V , IC = 0.1mA

100

580

Collector-emitter saturation voltage *

VCE(sat) IC = 10mA , IB = 1mA

0.07

0.3

V

Base-emitter voltage *

VBE

VCE =6V , IC = 1mA

0.55

0.59

0.65

V

Gain bandwidth product

fT

VCE =6V , IE = -1mA

50

110

MHz

Output capacitance

Cob

VCB = 30V , IE = 0 , f = 1.0MHz

1.6

2.5

pF

* Pulse test: tp

350 ìs; d

0.02.

DC current gain

hFE

hFE Classification

Marking

D15

D16

D17

D18

hFE

135

270

200

400

300

600

450

900

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2SC4180 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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