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2SC4852 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC4852
Description  NPN Epitaxial Planar Silicon Transistor
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4852 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4852 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Features
Small output capacitance.
Low collector-to-emitter saturation voltage.
Small ON resistance.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5V
Collector current
IC
100
mA
Collector current (pulse)
ICP
200
mA
Base current
IB
20
mA
Collector dissipation
PC
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =15V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB =4V, IC=0
0.1
ìA
DC current gain
hFE
VCE =2V , IC =5mA
800
3200
Gain bandwidth product
fT
VCE =5V , IC =10mA
240
MHz
Output capacitance
Cob
VCB = 10V , f = 1.0MHz
1.4
pF
Collector-emitter saturation voltage
VCE(sat) IC =10mA , IB = 1mA
14
30
mV
Base-emitter saturation voltage
VBE(sat) IC =10mV , IB = 1mA
0.74
1.1
V
Collector-base breakdown voltage
V(BR)CBO IC =10ìA , IE =0
25
V
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA , RBE =
15
V
Emitter-base breakdown voltage
V(BR)EBO IE =10ìA , IC =0
5
V
On resistance
Ron
IB = 3mA, f = 1.0MHz
0.9
Ù
Marking
Marking
YT
NPN Epitaxial Planar Silicon Transistor
2SC4852


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