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2SC4983 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4983 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Epitaxial Planar Silicon Transistors 2SC4983 Features AF power amplifier, medium-speed switching, small-sized motor drivers and LED drivers. Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5V Collector current IC 1A Collector current (pulse) ICP 3A Base current IB 200 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB =12V , IE =0 100 nA Emitter cutoff current IEBO VEB =4V , IC =0 100 nA DC current Gain hFE VCE =2V , IC = 50mA 135 600 Gain bandwidth product fT VCE =2V , IC =50mA 200 MHz Common base output capacitance Cob VCB = 10V , f = 1MHz 10 pF IC =5mA , IB = 0.5mA 10 25 mV IC =500mA , IB = 25mA 120 240 mV Base-to-emitter saturation voltage VBE(sat) IC =500mA , IB = 25mA 0.9 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC =-10ìA , IE =0 15 V Collector-to-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = 15 V Emitter-to-base breakdown voltage V(BR)EBO IE =-10ìA , IC =0 5 V Collector-to-emitter saturation voltage VCE(sat) hFE Classification Marking Rank 5 6 7 hFE 135 270 200 400 300 600 KN |
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