TC4422EPA datasheet(2/6 Pages) TELCOM

2 / 6 page

4-232

TELCOM SEMICONDUCTOR, INC.

9A HIGH-SPEED MOSFET DRIVERS

TC4421

TC4422

ELECTRICAL CHARACTERISTICS: T

A = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 Input Voltage

2.4

1.8

—

VIL

Logic 0 Input Voltage

—

1.3

0.8

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

Output

VOH

High Output Voltage

See Figure 1

VDD – 0.025

—

VOL

Low Output Voltage

See Figure 1

—

0.025

Output Resistance, High

VDD = 18V, IO = 10 mA

—

1.4

—

Ω

Output Resistance, Low

VDD = 18V, IO = 10 mA

—

0.9

1.7

Ω

IPK

Peak Output Current

VDD = 18V

—

IDC

Continuous Output Current

10V

≤ VDD ≤ 18V, TC = 25°

(TC4421/22 CAT only)

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

>1500

—

Withstand Reverse Current

≤ 300 µsec

Switching Time (Note 1)

Rise Time

Figure 1, CL = 10,000 pF

—

nsec

Fall Time

Figure 1, CL = 10,000 pF

—

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V

—

0.2

1.5

VIN = 0V

—

150

µA

VDD

Operating Input Voltage

4.5

—

Input

VIH

Logic 1 Input Voltage

2.4

—

VIL

Logic 0 Input Voltage

—

0.8

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

ABSOLUTE MAXIMUM RATINGS*

Power Dissipation, TA ≤ 70°C

PDIP .................................................................. 730W

CerDIP ............................................................ 800mW

5-Pin TO-220 ...................................................... 1.6W

Power Dissipation, TA ≤ 70°C

5-Pin TO-220 (With Heat Sink) ......................... 1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/

°C

CerDIP ....................................................... 6.4mW/

°C

5-Pin TO-220 .............................................. 12mW/

°C

Thermal Impedance (To Case)

5-Pin TO-220 RQJ-C ..................................................... 10°C/W

Storage Temperature ............................ – 65

°C to +150°C

Operating Temperature (Chip) ................................ 150

°C

Operating Temperature (Ambient)

C Version ............................................... 0

°C to +70°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

Lead Temperature (10 sec) ..................................... 300

°C

Supply Voltage ............................................................20V

Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)

Input Current (VIN > VDD) ........................................50 mA

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

TC4422EPA Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

TC4422EPA Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL