2SC2715 datasheet(1/1 Pages) KEXIN

Part #	2SC2715

Description	Silicon NPN Epitaxial

PDF	1 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Silicon NPN Epitaxial

2SC2715

Features

High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz).

Recommended for FM IF, OSC stage and AM CONV. IF stage.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

35

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

4V

Collector current

IC

50

mA

Base current

IB

10

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

Storage temperature range

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =35V, IE =0

0.1

ìA

Emitter cut-off current

IEBO

VEB =4V, IC =0

0.1

ìA

DC current gain

hFE

VCE =12V, IC = 2 mA

40

240

Collector-emitter saturation voltage

VCE (sat) IC =10mA, IB =1mA

0.4

V

Base-emitter voltage

VBE

IC =10mA, IB =1mA

1

V

Transition frequency

fT

VCE = 10V, IC = 1 mA

100

400

MHz

Collector output capacitance

Cob

VCB =10V, IE = 0 ,f= 1 MHz

2

3.2

pF

Collector-base time constant

Cc.rbb'

VCE = 10V, IE = -1 mA,f= 30 MHz

50

ps

Power gain

Gpe

VCC =6V, IE = -1 mA , f = 10.7 MHz

27

30

33

dB

hFE Classification

Marking

Rank

R

O

Y

hFE

40

80

70

140

120

240

R

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2SC2715 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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