TC96C55 datasheet(2/9 Pages) TELCOM

2 / 9 page

4-160

TELCOM SEMICONDUCTOR, INC.

ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25°C with 10V ≤ VDD ≤ 18V:

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

Oscillator

Voltage Stability

VDD = 7 to 18V

–

%/V

Temperature Stability

– 55

≤ Temp ≤ 125°C

–

0.4

–

°C

Power Supply

Power Supply Current

IDD0 ≤ VIN ≤ 3V

–

Switching Time1

Rise Time

C1 = 1800pF

–

nsec

Fall Time

C1 = 1800pF

–

nsec

tD1

Delay Time

C1 = 1800pF

–

140

180

nsec

tD2

Delay Time

C1 = 1800pF

–

100

140

nsec

Output

VOH

High Output Voltage

VDD – 0.025

––

VOL

Low Output Voltage

–

0.025

Output Res Hi State

VDD = 15V

–

3.5

Ω

Output Res Lo State

VDD = 15V

–

2.5

Ω

IPK

Peak Output Current

VDD = 18V

–

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ......................................................... +20V

Input Voltage, Pin 1 or 4 ................. VDD +0.3 to GND –0.3

Maximum Chip Temperature ................................. +150

°C

Storage Temperature Range ................ – 65

°C to +150°C

Package Thermal Resistance

CerDIP RΘJ-A ................................................................ 150°C/W

CerDIP RΘJ-C ................................................................... 50°C/W

PDIP RΘJ-A .................................................................... 125°C/W

PDIP RΘJ-C ....................................................................... 42°C/W

SOIC RΘJ-A .................................................................... 155°C/W

SOIC RΘJ-C ....................................................................... 45°C/W

Operating Temperature Range

C Version ............................................... 0

°C to +70°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP ...................................................... 730mW

CerDIP ............................................................ 800mW

SOIC ...............................................................470mW

ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25°C with 5V ≤ VDD ≤ 18V.

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

Programmable Current Range

Pin 4 Input Current for ISOURCE Control

(VREF - VR1) / RCHG Fig. 2

5.0

—

150

µA

Pin 1 Input Current for ISINK Control

(VREF - VR2) / RDIS Fig. 2

5.0

—

150

µA

Reference Section

VREF

VDD = 15V, IREF = 10µA

3.8

4.2

Line Regulation of VREF

VDD = 7V to 18V

—

0.6

%/V

Load Regulation of VREF

IREF = 0 to 1mA

—

0.1

0.2

%/mA

VDRIFT

VREF Drift Over Lifetime

—

TCVREF

VREF Tempco

– 55

≤ Temp ≤ 125°C

—

1100

2000

ppm/

°C

VR1, VR2

Voltage at Pin 1 & 4

2.85

3.0

3.15

VREF - VR

Voltage Across RCHG and RDIS

0.85

1.15

Vih

Pin 2, High Switching Threshold

VDD = 15V

1.8

2.2

Vil

Pin 2, Low Switching Threshold

VDD = 15V

0.8

1.2

Vih - Vil

Delta High to Low Threshold

VDD = 15V

0.9

1.0

1.1

IREF

VREF Pin 3 Short to GND Pin 5

VDD = 15V

—

TC96C555

3A OUTPUT PROGRAMMABLE

POWER OSCILLATOR

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