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2SA1685 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1685 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB =-30V , IE =0 -0.1 ìA Emitter cutoff current IEBO VEB =-4V , IC =0 -0.1 ìA DC current Gain hFE VCE =-1V , IC = -10mA 60 270 Gain bandwidth product fT VCE =-10V , IC = -10mA 400 MHz Common base output capacitance Cob VCB = -10V , f = 1MHz 2.9 pF Collector-to-emitter saturation voltage VCE(sat) IC =-10mA , IB =-1mA -0.07 -0.2 V Base-to-emitter saturation voltage VBE(sat) IC =-10mA , IB =-1mA -0.75 -1 V Collector-to-base breakdown voltage V(BR)CBO IC =-10ìA , IE =0 -40 V Collector-to-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = -20 V Emitter-to-base breakdown voltage V(BR)EBO IE =-10ìA , IC =0 -5 V Delay time td 14 20 ns Rise time tr 11 20 ns Storage time ts 80 180 ns Fall time tf 16 25 ns 2SA1685 hFE Classification Marking Rank 3 4 hFE 60 120 90 180 YL |
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