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2SB1295 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SB1295
Description  PNP Epitaxial Planar Silicon Transistors
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB1295 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB1295 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
PNP Epitaxial Planar Silicon Transistors
2SB1295
Features
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-0.8
A
Collector current (pulse)
ICP
-3
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =-12V , IE =0
-100
nA
Emitter cutoff current
IEBO
VEB =-4V , IC =0
-100
nA
DC current Gain
hFE
VCE =-2V , IC = -50mA
135
600
Gain bandwidth product
fT
VCE =-2V , IC =-50mA
300
MHz
Output capacitance
Cob
VCB = -10V , f = 1MHz
15
pF
VCE(sat) IC =-5mA , IB = -0.5mA
-10
-25
mV
VCE(sat) IC = -400mA , IB = -20mA
-100
-200
mV
Base-to-emitter saturation voltage
VBE(sat) IC = -400mA , IB =-20mA
-0.9
-1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC =-10ìA , IE =0
-15
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC =-1mA , RBE =
-15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE =-10ìA , IC =0
-5
V
Collector-emitter saturation voltage
hFE Classification
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
UL


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