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BA779 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # BA779
Description  Silicon PIN Diodes
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BA779 Datasheet(HTML) 1 Page - Vishay Siliconix

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BA779.BA779S
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (4)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85532
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 8550
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
–55...+125
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm
RthJA
500
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=20mA
VF
1
V
Reverse current
VR=30 V
IR
50
nA
Diode capacitance
f=100MHz, VR=0
CD
0.5
pF
Differential forward re-
sistance
f=100MHz, IF=1.5mA
rf
50
W
Reverse impedance
f=100MHz, VR=0
BA779
zr
5
k
W
R
BA779S
zr
9
k
W
Minority carrier lifetime
IF=10mA, IR=10mA
t
4
ms


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