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BU326 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU326
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU326 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU326 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU326 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
BU326
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 375V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
APPLICATIONS
·Designed for use in operating in color TV receivers chopper
supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.33
℃/W


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