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BUX47A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX47A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX47A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) ·Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage (RBE= 10Ω) 1000 V VCES Collector-Emitter Voltage (VBE= 0) 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak tp< 5ms 15 A IB B Base Current-Continuous 8 A IBM Base Current-peak tp< 5ms 10 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc Website：www.iscsemi.cn |
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