BUV70 datasheet(2/2 Pages) ISC

Part #	BUV70

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUV70

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 100mA; LC= 125mH

600

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 9A; IB= 3A

1.8

VBE(sat)

Base-Emitter Saturation Voltage

IC= 9A; IB= 3A

2.0

ICES

Collector Cutoff Current

VCE= 1300V; VBE= 0

VCE= 1200V; VBE= 0; TC=125℃

1.0

2.0

hFE-1

DC Current Gain

IC= 3.2A; VCE= 2V

hFE-2

DC Current Gain

IC= 1.5A; VCE= 5V

hFE-3

DC Current Gain

IC= 6A; VCE= 2V

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V, f= 1MHz

MHz

Switching times Resistive Load

ton

Turn-on Time

0.5

μs

Storage Time

4.0

μs

Fall Time

IC= 5A; IB1= -IB2= 1A;

VCC= 250V; tp= 20μs

0.6

μs

isc Website：www.iscsemi.cn

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