MJE253 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJE253

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -10mA; IB= 0

-100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -0.5 A ;IB= -50mA

-0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -1A ;IB= -0.1A

-0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= -2A ;IB= -0.2A

-1.8

VBE(on)

Base-Emitter On Voltage

IC= -0.5A; VCE= -1V

-1.5

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

VCB= -100V; IE= 0;TC= 125℃

-0.1

μA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-0.1

μA

hFE-1

DC Current Gain

IC= -0.2 A ; VCE= -1V

180

hFE-2

DC Current Gain

IC= -1A ; VCE= -1V

Current-Gain—Bandwidth Product

IC= -0.1 A; VCE= -10V; ftest = 10MHz

MHz

COB

Collector Capacitance

IE= 0; VCB= -10V; ftest = 0.1MHz

isc Website：www.iscsemi.cn

MJE253 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

MJE253 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL