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2SC3122 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SC3122
Description  isc Silicon NPN RF Transistor
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3122 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3122
DESCRIPTION
·High Gain-
: Gpe= 24dB TYP. @ f= 200MHz
·Low Noise-
: NF= 2.0dB TYP. @ f= 200MHz
APPLICATIONS
·Designed for TV VHF RF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
20
mA
IB
B
Base Current-Continuous
10
mA
PC
Collector Power Dissipation
@TC=25℃
0.15
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature Range
-55~125
℃
isc Website：www.iscsemi.cn


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