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2SD1154 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1154 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.2 V VCE= 350V; VBE= 0 0.1 ICES Collector Cutoff Current VCE= 350V; VBE= 0;TC= 100℃ 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 5 mA hFE DC Current Gain IC= 5A ; VCE= 4V 11 36 tf Fall Time IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω 0.75 μs hFE Classifications R Q P 11-15 11-22 18-36 isc Website:www.iscsemi.cn |
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