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LTC4355 Datasheet(PDF) 8 Page - Linear Technology

Part # LTC4355
Description  Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors
PDF  16 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC4355 Datasheet(HTML) 8 Page - Linear Technology

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LTC4355

4355fa
applicaTions inForMaTion
MOSFET Selection
The LTC4355 drives N-channel MOSFETs to conduct the
load current. The important features of the MOSFETs are
on-resistanceRDS(ON),themaximumdrain-sourcevoltage
VDSS, and the threshold voltage.
The gate drive for the MOSFET is guaranteed to be greater
than 4.5V when the supply voltage at VOUT is between 9V
and 20V. When the supply voltage at VOUT is greater than
20V,thegatedriveisguaranteedtobegreaterthan10V.The
gate drive is limited to less than 18V. This allows the use
of logic level threshold N-channel MOSFETs and standard
N-channel MOSFETs above 20V. An external zener diode
can be used to clamp the potential from the MOSFET’s
gate to source if the rated breakdown voltage is less than
18V. See the circuit in Figure 4 for an example.
The maximum allowable drain-source voltage, BVDSS,
must be higher than the supply voltages. If an input is
connected to GND, the full supply voltage will appear
across the MOSFET.
If the voltage drop across either MOSFET exceeds
the configurable
DVSD(FLT) fault threshold, the VDS-
FLT pin and the PWRFLT pin corresponding to the
faulting channel pull low. The RDS(ON) should be
small enough to conduct the maximum load current
while not triggering a fault, and to stay within the
MOSFET’s power rating at the maximum load current
(I2 • RDS(ON)).
Fault Conditions
TheLTC4355monitorsfaultconditionsandshuntscurrent
away from LEDs or optocouplers, turning each one off to
indicate a specific fault condition (see Table 1).
When the voltage drop across the pass transistor is higher
thantheconfigurable
DVSD(FLT)faultthreshold,theinternal
pulldown at the VDSFLT pin and the PWRFLT1 or PWRFLT2
pin corresponding to the faulting channel turns on. The
DVSD(FLT) threshold is configured by the SET pin. Tying
SET to GND, tying SET to a 100k
W resistor connected
to GND, or floating SET configures
DVSD(FLT) to 250mV,
500mV, or 1.5V respectively.
Fault conditions that may cause a high voltage across the
pass transistor include: a MOSFET open on the higher
supply, excessive MOSFET current due to overcurrent
on the load or a shorted MOSFET on the lower supply.
During startup or when a switchover between supplies
occurs, the VDSFLT pin and PWRFLT1 or PWRFLT2 pin
may momentarily indicate that the forward voltage has
exceeded the programmed threshold during the short
interval when the MOSFET gate ramps up and the body
diode conducts.
The PWRFLT pins are additionally used to indicate if either
input supply is below its normal regulation range. If the
voltage at the MON1 or MON2 pin is less than VMON(TH),
typically 1.23V, the corresponding PWRFLT1 or PWRFLT2
pin will pull low. A resistive divider connected to the input
supply drives the MON pin for the corresponding supply,
configuring the PWRFLT threshold for that supply. Be sure
to account for the tolerance of the MON pin threshold, the
resistor tolerances, and the regulation range of the supply
being monitored. Also, ensure that the voltage on the MON
pin will not exceed 7V.
The FUSEFLT pins are used to indicate the status of the
input fuses. If one of the IN pins falls below VINx(TH), typi-
cally 3.5V, the FUSEFLT pin corresponding to that supply
will pull low. The IN pins each sink a minimum of 0.5mA,
Table 1. Fault Table
DVSD1
<
DVSD(FLT)
VIN1
> 3.5V
VMON1
> 1.23V
VDSFLT* FUSEFLT1 PWRFLT1
True
True
True
Hi-Z
Hi-Z
Hi-Z
True
True
False
Hi-Z
Hi-Z
Pulldown
True
False
True
Hi-Z
Pulldown
Hi-Z
True
False
False
Hi-Z
Pulldown Pulldown
False
True
True
Pulldown
Hi-Z
Pulldown
False
True
False
Pulldown
Hi-Z
Pulldown
False
False
True
Pulldown
Pulldown Pulldown
False
False
False
Pulldown
Pulldown Pulldown
*
DVSD2 < DVSD(FLT)
enough to pull the pin low after an input fuse blows open.
If there is a possibility that the MOSFET leakage current
can be greater than 0.5mA, a resistor can be connected
between the IN pin and GND to sink more current. Note
that if the input supply voltage is less than VINx(TH) the
FUSEFLT pin will pull low.



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