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STM4886 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STM4886 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() S mHop Microelectronics C orp. a STM4886 Symbol VDS VGS IDM EAS 50 W A PD °C 2.5 -55 to 150 ID Units Parameter 30 17 68 °C/W V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS 181 mJ PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 17A 8 @ VGS=4.5V 5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw Mar,24,2008 1 Details are subject to change without notice. a TA=25°C S O-8 1 4 3 2 1 D D D D G S S 5 6 7 8 S |
Similar Part No. - STM4886 |
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Similar Description - STM4886 |
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