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STM8020 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp. |
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STM8020 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp. |
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3 / 7 page ![]() STM8020 Parameter Symbol Condition Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) C DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS = 0V, Is =1.7A 0.73 1.2 V b Notes Figure 1. Output Characteristics Figure 2. Transfer Characteristics VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 3 Figure 4. On-Resistance Variation with Drain Current and Temperature 1.75 1.60 1.45 1.30 1.15 1.0 0 0 25 50 125 Tj( C) 100 75 VGS=10V ID=10A Tj, Junction Temperature ( C) ID, Drain Current (A) 18 15 12 9 6 3 1 Figure 3. On-Resistance vs. Drain Current and Gate Voltage 20 40 60 80 100 1 VGS=10V VGS=4.5V 150 c.Guaranteed by design, not subject to production testing. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. a.S urface Mounted on FR 4 Board, t 10sec. VGS=4.5V D =6A I 20 16 12 4 0 0 Tj =125 C 80 60 40 20 0 0 0.5 1.5 2 2.5 3 V GS =4V VGS=3.5 V VGS=10V 100 2.8 3.5 2.1 1.4 0.7 4.2 -55 C 25 C 8 V GS =2.5V V GS =3V 1 VGS=4.5 V |
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