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STS2601 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

Part # STS2601
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS2601 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

  STS2601 Datasheet HTML 1Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 2Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 3Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 4Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 5Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 6Page - SamHop Microelectronics Corp. STS2601 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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STS2601
Ver 1.0
www.samhop.com.tw
Nov,17,2008
3
T j ( °
C )
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
Figure 4. On-Resistance Variation with Drain
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
and Gate Voltage
Current and Temperature
with Temperature
with Temperature
120
100
80
60
40
20
1
2
4
6
8
10
1
V GS =-2.5V
V GS =-4.5V
2.0
1.8
1.6
1.4
1.2
1.0
0
0
100
75
25
50
V G S =-2.5V
ID=-3.4A
125
V G S =-4.5V
ID=-4.0A
150
10
8
6
4
2
0
0
2
4
6
8
10
12
-V GS =1.5V
25 C
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
T j=125 C
-55 C
3
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
V DS =V G S
ID=-250uA
-50
-25
0
25
50
75
100 125
1.10
1.07
1.04
1.00
0.97
0.94
0.91
ID=-250uA
-V GS =3.5V
-V GS =4.5V
-V GS =2.5V



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