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STS6601 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS6601 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  STS6601 PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -60V -3.2A 160 @ VGS=-4.5V Ver 1.0 www.samhop.com.tw Sep,30,2008 1 Details are subject to change without notice. G D S P-Channel Enhancement Mode Field Effect Transistor S mHop Microelectronics C orp. a 110 @ VGS=-10V S OT26 Top View D G D D S 1 2 3 6 5 4 D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-26 package. Symbol VDS VGS IDM 62.5 W A PD °C 2 -55 to 150 ID Units Parameter -60 -3.2 °C/W V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA a TA=25°C -12 A TA=70°C TA=70°C A W -2.6 1.28 |
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Similar Description - STS6601 |
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