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2N6316 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6316
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6316 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6316 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6316 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6316 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6315 2N6316
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6315
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6316
IC=0.1A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.4 A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A; IB=1.75A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.75A
2.5
V
VBE
Base-emitter on voltage
IC=2.5A ; VCE=4V
1.5
V
2N6315
VCE=30V; IB=0
ICEO
Collector cut-off current
2N6316
VCE=40V; IB=0
0.5
mA
2N6315
VCB=60V; IE=0
ICBO
Collector cut-off current
2N6316
VCB=80V; IE=0
0.25
mA
ICEX
Collector cut-off current
VCE=Rated VCE; VBE(off)=1.5V
TC=150℃
0.25
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=4V
35
hFE-2
DC current gain
IC=2.5A ; VCE=4V
20
100
hFE-3
DC current gain
IC=7A ; VCE=4V
4
fT
Transition frequency
IC=0.25A;VCE=10V;f=1.0MHz
4
MHz



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