| Electronic Components Datasheet Search |
|
2SC2429 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC2429 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2429 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1A ; RBE=∞ 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 0.45 1.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.2 2.0 V ICBO Collector cut-off current VCB=450V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=5V 10 15 40 fT Transition frequency IC=2A ; VCE=10V,f=10MHz 35 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF Switching times tr Rise time 0.15 0.5 μs tstg Storage time 1.20 2.5 μs tf Fall time VCC=150V,IC=10A IB1=-IB2=2A 0.10 0.3 μs |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |