2SD600 datasheet(2/3 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD600

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

100

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA ; RBE= ∞

100

V(BR)EBO

Emitter-Base Breakdown Vltage

IE= 10μA ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 500mA; IB= 50mA

0.4

VBE(sat)

Base-Emitter Saturation Voltage

IC= 500mA; IB= 50mA

1.2

ICBO

Collector Cutoff Current

VCB= 50V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

μA

hFE-1

DC Current Gain

IC= 50mA ; VCE= 5V

320

hFE-2

DC Current Gain

IC= 500mA ; VCE= 5V

Current-Gain—Bandwidth Product

IC= 50mA ; VCE= 10V

130

MHz

COB

Output Capacitance

IE= 0; VCB= 10V,ftest= 1MHz

Switching times

Fall Time

0.1

μs

toff

Turn-Off Time

0.5

μs

tstg

Storage Time

IC= 500mA ,RL=24Ω,

IB1= -IB2= 50m A,VCE= 12V

0.7

μs

hFE-1 Classifications

60-120

100-200

160-320

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