2SA673

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for low frequency amplifier applications

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

-35

V

Collector-Emitter Voltage

-35

V

Emitter-Base Voltage

-5

V

Collector Current

-500

mA

Total Power Dissipation

400

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Rank

B

C

D

Range

60~120

100~200

160~320

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

-35

-

-

V

Collector-Emitter Breakdown Volatge

-35

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

Collector Cutoff Current

-

-

-0.5

µA

Emitter Cutoff Current

-

-

-0.5

µA

-

-0.1

-0.6

V

-

-

-1.2

V

60

-

320

-

35

-

-

-

Transition Frequency

-

190

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%