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BAT81S-TAP Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BAT81S-TAP
Description  Small Signal Schottky Diodes
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAT81S-TAP Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85512
Rev. 1.7, 26-Feb-07
BAT81S/82S/83S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air l = 4 mm, TL = constant
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 0.1 mA
VF
330
mV
IF = 1 mA
VF
410
mV
IF = 15 mA
VF
1000
mV
Reverse current
VR = VRmax
IR
200
nA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
1.6
pF
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 2. Reverse Current vs. Junction Temperature
0
2
4
6
8
10
12
14
25
50
75
100
125
150
T
j - Junction Temperature (°C)
15794
V
R = 60 V
R
thJA = 540 K/W
PR
VR
- Limit at 100 %
P
R - Limit at 100 % VR
P
R - Limit at 80 % VR
0.1
100
1000
25
50
75
100
125
150
1
10
15795
VR = VRRM
Tj - Junction Temperature (°C)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
0
0.5
1
1.5
2.0
VF - Forward Voltage (V)
15796
T
j = 25 °C
T
j = 125 °C
0.1
1
10
100
1000
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
V
R - Reverse Voltage (V)
15797
f = 1 MHz



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