MF3ICD21_41_81_SDS_2

© NXP B.V. 2009. All rights reserved.

Product short data sheet

Rev. 02 — 6 March 2009

3 of 15

NXP Semiconductors

MF3ICD21, MF3ICD41, MF3ICD81

MIFARE DESFire EV1 contactless multi-application IC

4.

Quick reference data

[1]

Stresses above one or more of the values may cause permanent damage to the device.

[2]

Exposure to limiting values for extended periods may affect device reliability.

[3]

Measured with LCR meter.

5.

Ordering information

[1]

This package is also known as MOA4.

Table 1.

Quick reference data [1][2]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input frequency

-

13.56

-

MHz

input capacitance

2.8 V RMS

[3] 14.96

17.0

19.04

pF

EEPROM characteristics

retention time

10

-

-

year

write endurance

200000

500000

-

cycle

write cycle time

-

2.9

-

ms

Table 2.

Ordering information

Type number

Package

Name

Description

Version

MF3ICD8101DUD/04

FFC

8 inch wafer (sawn; 120

µm thickness, on film

frame carrier; electronic fail die marking

according to SECSII format); see Ref. 4, 8K EEPROM

-

MF3ICD4101DUD/04

FFC

8 inch wafer (sawn; 120

µm thickness, on film

frame carrier; electronic fail die marking

according to SECSII format); see Ref. 4, 4K EEPROM

-

MF3ICD2101DUD/04

FFC

8 inch wafer (sawn; 120

µm thickness, on film

frame carrier; electronic fail die marking

according to SECSII format); see Ref. 4, 2K EEPROM

-

MF3MOD8101DA4/04

PLLMC[1]

plastic leadless module carrier package; 35 mm

wide tape; see Ref. 5, 8K EEPROM

SOT500-2

MF3MOD4101DA4/04

PLLMC[1]

plastic leadless module carrier package; 35 mm

wide tape; see Ref. 5, 4K EEPROM

SOT500-2

MF3MOD2101DA4/04

PLLMC[1]

plastic leadless module carrier package; 35 mm

wide tape; see Ref. 5, 2K EEPROM

SOT500-2