2N4401 datasheet(1/2 Pages) SECOS

Part #	2N4401

Description	NPN Transistor Plastic-Encapsulate Transi stors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

2N4401

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46+0.1

–0.1

0.43+0.08

–0.07

1

3

2

1: Emitter

2: Base

3: Collector

1.25–0.2

+0.2

TO-92

Features

Power Dissipation

01-Jun-2002 Rev. A

Page 1 of 2

NPN Transistor

Plastic-Encapsulate Transistors

MAXIMUM RATINGS* TA=25 C unless otherwise noted

ELECTRICAL CHARACTERISTICS ( Tamb=25 C

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100µA , IE

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA , IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

6

V

Collector cut-off current

ICBO

VCB=35V, IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=35V, IB=0

0.5

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

hFE(1)

VCE=1V, IC= 0.1mA

20

hFE(2)

VCE=1V, IC=1mA

hFE(3)

VCE=1V, IC= 10mA

50

hFE(4)

VCE=1V, IC=150mA

300

DC current gain

hFE(5)

VCE=2V, IC= 500mA

40

VCE(sat)1

IC=150 mA, IB=15mA

0.4

V

Collector-emitter saturation voltage

VCE(sat)2

IC=500 mA, IB=50mA

0.75

V

VBE(sat)1

IC=150 mA, IB=15mA

0.95

V

Base-emitter saturation voltage

VBE(sat)2

IC=500 mA, IB=50mA

V

Transition frequency

f T

VCE= 10V, IC= 20mA,

f=100MHz

250

MHz

Output Capacitance

Cob

VCB=10V, IE= 0,f=1MHz

6.5

pF

V

mA

W

C

o

C

o

C

o

=0

40

100

Delay time

td

15

nS

Rise time

tr

VCC=30V, VBE=2V

IC=150mA, IB1=15mA

20

nS

Storage time

tS

225

nS

Fall time

tf

VCC=30V, IC=150mA

IB1= IB2= 15mA

30

nS

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

VCEO

Collector-Emitter Voltage

40

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

600

P C *

Collector Power dissipation

0.625

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55to +150

R

θJA

Thermal Resistance, junction to Ambient

357

/mW

V

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Similar Part No. - 2N4401

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	2N4401	303Kb / 6P	General Purpose Transistors(NPN Silicon) 1996 REV 1
NXP Semiconductors	2N4401	46Kb / 8P	NPN switching transistor 1999 Apr 23
Rohm	2N4401	80Kb / 3P	NPN Medium Power Transistor
Semtech Corporation	2N4401	209Kb / 3P	NPN EXPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	2N4401	29Kb / 2P	NPN General Purpose Amplifier

More results

Similar Description - 2N4401

Manufacturer	Part #	Datasheet	Description
Weitron Technology	2SD2098	111Kb / 5P	NPN Plastic-Encapsulate Transistor
SeCoS Halbleitertechnol...	2N5401	166Kb / 1P	PNP Transistor Plastic-Encapsulate Transi stors
	2SC2411	230Kb / 2P	NPN Transistor Plastic-Encapsulate Transi stors
	2SD2142	218Kb / 2P	NPN Plastic Plastic-Encapsulate Transistor
	2SC2883	370Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4098	83Kb / 1P	NPN Plastic-Encapsulate Transistor
	2SC4116	172Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4215	195Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SD602	1Mb / 3P	NPN Plastic-Encapsulate Transistor
	BC846W	909Kb / 4P	NPN Plastic Encapsulate Transistor

More results

2N4401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2N4401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - 2N4401

Similar Description - 2N4401

Html Pages

1 2

Datasheet Download

Link URL