2N7002T datasheet(2/3 Pages) SECOS

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Elektronische Bauelemente

Small Signal MOSFET

115 mAMPS, 60VOLTS, RDS(on)=7.5

2N7002T

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

V(BR)DSS

–

Vdc

Zero Gate Voltage Drain Current

TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

IDSS

–

1.0

500

µAdc

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

IGSSF

–

nAdc

Gate–Body Leakage Current, Reverse

(VGS = –20 Vdc)

IGSSR

–

–10

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

–

2.0

Vdc

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

ID(on)

0.5

–

Static Drain–Source On–State Resistance

(VGS = 10 V, ID = 500 mAdc)

TC = 25

°C

(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

RDS(on)

–

13.5

7.5

Ohms

Forward Transconductance

(VDS = 10 V, ID = 200 mAdc)

gFS

–

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

–

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

–

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

–

5.0

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

(VDD = 30 Vdc, ID ^ 200 mAdc,

td(on)

–

Turn–Off Delay Time

(VDD 25 Vdc, ID ^ 500 mAdc,

RG = 25 Ω, RL = 150 Ω, Vgen = 10 V)

td(off)

–

01-Jun-2002 Rev. A

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